Neeraj
Temprature Dependance on Various Electrical Characterstics for Silicon Carbide (4H-SiC) Based Gate – Stack (GS) Dual Metal (DM) Nanowire (NW) FET
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has presented the paper titled
at the 21st IEEE INDICON 2024 held at IIT Kharagpur from 19-21 December 2024.
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Neeraj
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Credential Verification
Issue date: January 13, 2025
ID: 23a9ffed-ecc1-4379-a1bd-3e89d3c97d0a
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IIT Kharagpur
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